[21a-P02-1~50] 10 Spintronics and Magnetics(Poster)

▲ [21a-P02-7] Characteristic Investigation of Spin Gapless Semiconductor CoFeMnSi Thin Films for Spin Injection

〇(D)Juncheng Wang¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Takafumi Nakano¹ (1.Tohoku Univ.)

Keywords:spin gapless semiconductor

The Spin-MOSFET is expected to show a high performance in integrated circuits. Efficient spin injection into semiconductors from ferromagnet is important for the realization of the Spin-MOSFET. To enhance the efficiency of spin injection, ferromagnets with high spin polarization and semiconductor like resistivity were proposed. We focused on a new class material with both these properties: Spin gapless semiconductor CoFeMnSi (CFMS). CFMS have a spin gapless structure and semiconductor behavior which have been proofed in theories and experiments. In this study, we aim to investigate the crystal structure, magnetic and electrical properties of CMFS thin films grown on MgO substrates.