Growth of ultra-low density of InAs quantum dot on InP(311)B substrates

Kouichi Akahane; Kiyora Kaneki; Atsushi Matsumoto; Toshimasa Umezawa; Naokatsu Yamamoto; Tomohiro Maeda; Hideyuki Sotobayashi; Yoriko Tominaga; Atsushi Kanno

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21p-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 21, 2022 1:00 PM - 3:30 PM A105 (A105)

Takaaki Mano(NIMS), Fumitaro Ishikawa(Hokkaido Univ.)

2:45 PM - 3:00 PM

[21p-A105-7] Growth of ultra-low density of InAs quantum dot on InP(311)B substrates

〇Kouichi Akahane¹, Kiyora Kaneki², Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Tomohiro Maeda², Hideyuki Sotobayashi², Yoriko Tominaga³, Atsushi Kanno¹ (1.NICT, 2.Aoyama Gakuin Univ., 3.Hiroshima Univ.)

Keywords:quantum dot, interdiffusion epitaxy, surfactant

In this study, we developed growth technique for low density InAs self-assembled quantum dots on InP(311)B substrate using interdiffusion epitaxy and Bi surfactant effect.