[21p-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21p-A105-9] The Effect of Growth Speed on Photoluminescence of InGaP

〇Maui Hino¹, Meita Asami¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.The Univ. of Tokyo, 2.RCAST)

Keywords:Solar Cell, Crystal Growth, MOCVD

InGaP is one of the materials used in multi-junction solar cells. In InGaP crystal growth has been required to suppress ordering and control the bandgap at a high value. It has been said that fast growth and suppression of ordering are good for solar cells. However, in this research, it was revealed that when the luminescence efficiency is taken into consideration, slower growth may lead to higher open-circuit voltage as a solar cell even if ordering occurs.