[21p-A200-1~8] Future perspectives in Spintronics "Memorial symposium of 20th anniversary of JSAP Spintronics professional group"

[21p-A200-2] Recent Progress in Semiconductor Spintronics Materials and Devices

〇Masaaki Tanaka^1,2,3 (1.CSRN, Univ. of Tokyo, 2.EEIS, Univ. of Tokyo, 3.NanoQuine, U. Tokyo)

Keywords:spintronics, ferromagnetic semiconductor, spin transport

In this talk, we focus on the recent progress in the research of ferromagnetic semiconductors (FMSs), their heterostructures and functionalities. Using low-temperature molecular beam epitaxy, we have successfully grown both p-type FMS [(Ga,Fe)Sb, (Al,Fe)Sb] and n-type FMSs [(In,Fe)As, (In,Fe)Sb]. The most notable feature in these Fe-based FMSs is that the Curie temperature T_C value increases monotonically as the Fe content increases; and there is a tendency that T_C is higher as the bandgap is narrower, indicating a new chemical trend. Intrinsic room-temperature ferromagnetism has been observed in (Ga_1-x,Fe_x)Sb with x > 23% and (In_1-x,Fe_x)Sb with x > 16%, which are promising for practical spintronic devices operating at room temperature. We also present our findings on new magnetotransport phenomena in heterostructures containing these Fe-doped FMSs.