[21p-A202-1~12] 3.8 Terahertz technologies (formerly 3.9)

[21p-A202-8] Piezoresistive Detection and Frequency Noise of MEMS Bolometer Structure using p-type GaAs Heterojunctions

〇(M2)Shu Odajima^1,2, Boqi Qiu², Tianye Niu^1,2, Nobuaki Watanabe², Naomi Nagai², Ya Zhang³, Kazuhiko Hirakawa² (1.Univ. of Tokyo, 2.IIS/INQIE, 3.TUAT)

Keywords:THz, MEMS sensor

The detection of THz radiation is difficult in conventional ways. However, in our method, we can detect THz radiation in high responsivity, high speed, room temperature using bolometer detection with the double-clamped MEMS resonator. In this research, we measure the sample using piezoresistive detection on the P-type substrate, and we achieve 1000 times bigger output-signals (~mV) compared with piezoelectric effect detection (~μV). We also measure the PSD of frequency noise, and we achieve the result that the noise is suppressed as the driving voltage of the beam and the detection bias voltage get bigger.