Enhanced THz electric field by nonlinear conductivity due to phase-separation of VO<sub>2</sub> micro wire on Si substrate

Ai Osaka; Masaya Nagai; Shingo Genchi; Hui Ren; Hidekazu Tanaka; Azusa N. Hattori

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21p-B204-1~17] 6.3 Oxide electronics

Wed. Sep 21, 2022 1:30 PM - 6:00 PM B204 (B204)

Yumiko Katayama(Univ. of Tokyo), Daisuke Shiga(Tohoku Univ)

1:30 PM - 1:45 PM

[21p-B204-1] Enhanced THz electric field by nonlinear conductivity due to phase-separation of VO₂ micro wire on Si substrate

〇Ai Osaka¹, Masaya Nagai², Shingo Genchi¹, Hui Ren¹, Hidekazu Tanaka¹, Azusa N. Hattori¹ (1.SANKEN, Osaka Univ., 2.Graduate School of Engineering Science, Osaka Univ.)

Keywords:vanadium dioxide, THz-FEL, electric field enhancement

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Presentation information

[21p-B204-1~17] 6.3 Oxide electronics

[21p-B204-1] Enhanced THz electric field by nonlinear conductivity due to phase-separation of VO2 micro wire on Si substrate

[21p-B204-1] Enhanced THz electric field by nonlinear conductivity due to phase-separation of VO₂ micro wire on Si substrate