2022年第83回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

6 薄膜・表面 » 6.3 酸化物エレクトロニクス

[21p-B204-1~17] 6.3 酸化物エレクトロニクス

2022年9月21日(水) 13:30 〜 18:00 B204 (B204)

片山 裕美子(東大)、志賀 大亮(東北大)

17:30 〜 17:45

[21p-B204-16] Electrochemical Redox Treatment and Heat-Electron Transport Properties of SrCoOx-SrFeOx Solid Solution Films

〇(D)卞 志平1、楊 倩2、吉村 充生3、ジョ ヘジュン4、太田 裕道4 (1.北大院情報、2.中国・江蘇大、3.北大工、4.北大電子研)

キーワード:熱トランジスタ

In order to improve the performance of the thermal transistor, detailed mechanism of the thermal conductivity change needs to be clarified. In this study, we focused on the changes in the electron transport and crystal structure of SrCoOx-SrFeOx solid solutions (SCFOss hereafter) because the crystal structure of SrFeO2 is an infinite layer different from that of SrCoO2 (defect perovskite).
Out-of-plane XRD patterns of the oxidized SCFOss films indicated that perovskite structured SrCo1−xFexO3 solid solutions were obtained. The electrical resistivity (ρ) of the SFCOss increased gradually with x. The thermopower (S) was negative in all cases. Absolute value of S gradually increased with x. These results may reflect gradual change in the electronic states with x. Then, we measured the cross-plane thermal conductivity of the films x = 0 and 1 and found the x = 0 film (~3.8 W m−1 K−1) shows ~1 W m−1 K−1 higher thermal conductivity than x = 1 film (~2.9 W m−1 K−1). Using the in-plane electrical conductivity, we calculated the electron thermal conductivity and found that κele of the x = 0 film (~1 W m−1 K−1) is ~1 W m−1 K−1 higher than that of x = 1 film (≈ 0). We would like to discuss on the thermal conductivity of both oxidized and reduced films at the conference.