[21p-C105-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[21p-C105-11] Optimal Design of Multilayer Si Nanosheet Thermoelectric Generation Devices

〇Yuma Miyake¹, Katsuki Abe¹, Motohiro Tomita¹, Takeo Matsuki², Takanobu Watanabe¹ (1.Waseda Univ., 2.AIST)

Keywords:thermoelectric generation, Si nanosheet

The group has devised and demonstrated a planar thermoelectric generation device. However, since there is a limit to the miniaturization of thermoelectric devices, there is also an upper limit to the density of devices that can be integrated in a plane. Therefore, we conducted FEM analysis to see if we could further increase the power generation density by employing a three-dimensional structure such as a stacked Si nanosheet FET. The results showed that there is a trade-off between open-circuit voltage and electrical resistance, so increasing the number of layers is not necessarily a good thing, but a sufficient power generation performance was obtained with a three-dimensional structure.