3:45 PM - 4:00 PM
[21p-C202-1] Growth and characterization of high quality non-centrosymmetric β’-SnS
Keywords:semiconductor, non-centrosymmetric, 2D-material
Recently, shift current has been attracting attention as one of the photovoltaic effects.
Shift currents are currents that flow in accordance with the difference in Berry connections at the upper and lower ends of the bands during interband transitions of electrons, and require the breaking of spatial inversion symmetry in the crystal lattice.
In SnS, a two-dimensional layered semiconductor, a large shift current is predicted, comparable to that of Si solar cells, but this has not yet been demonstrated. We have grown SnS with inversion symmetry breaking on mica substrates and demonstrated ferroelectric properties, but the crystallinity is poor and most of the theoretically predicted vibrational modes have not been observed in Raman spectroscopy measurements.SnS on mica substrate is lattice-matched with mica, and the strongly introduced strain is thought to stabilize the β' phase with broken spatial inversion symmetry.
In this study, in order to prepare SnS with a measurable shift current, the substrate was changed to HOPG to reduce the interaction with the substrate, and the crystallinity and thermal stability of the SnS were evaluated.
Shift currents are currents that flow in accordance with the difference in Berry connections at the upper and lower ends of the bands during interband transitions of electrons, and require the breaking of spatial inversion symmetry in the crystal lattice.
In SnS, a two-dimensional layered semiconductor, a large shift current is predicted, comparable to that of Si solar cells, but this has not yet been demonstrated. We have grown SnS with inversion symmetry breaking on mica substrates and demonstrated ferroelectric properties, but the crystallinity is poor and most of the theoretically predicted vibrational modes have not been observed in Raman spectroscopy measurements.SnS on mica substrate is lattice-matched with mica, and the strongly introduced strain is thought to stabilize the β' phase with broken spatial inversion symmetry.
In this study, in order to prepare SnS with a measurable shift current, the substrate was changed to HOPG to reduce the interaction with the substrate, and the crystallinity and thermal stability of the SnS were evaluated.