The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

3 Optics and Photonics » 3.12 Semiconductor optical devices (formerly 3.13)

[21p-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

Wed. Sep 21, 2022 1:30 PM - 4:15 PM C301 (C301)

Masakazu Arai(Univ. of Miyazaki), Kazuhiko Shimomura(Sophia Univ.)

1:30 PM - 1:45 PM

[21p-C301-1] Evaluation of Transition Energy of InAs/GaSb Superlattice by Using PL and PR Method

Tatsuhiko Yatabe1, Riku Sakoda1, Masakazu Arai1, Tetsuo Ikari1, Atsuhiko Fukuyama1 (1.Miyazaki Univ.)

Keywords:photoreflectance spectroscopy, superlattice

InAs/GaSb Type2 Superlattice is as material for mid-infrared detectors.
In this research, we measured the transition energies of the samples using the photoreflectance and photoluminescence methods and compared them with theoretical calculations using nextnano.
Two signal peaks were obtained from the PR measurements. From comparison with thoretical calculations, we considered that peak 1 is trasition between the lowest quantum state for electrons and the first quantum state for heavy holes(e1-hh1), and peak2 is the transition between e1-hh2.