[21p-C304-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

▲ [21p-C304-2] Epitaxial Electro-optical Thin Film and Fabrication of EO Waveguide Modulator

〇(M1C)Futa Uemura¹、Jiawei Mao¹、Shiyoshi Yokoyama¹ (1.Kyushu University IGSES)

キーワード：PZT, waveguide, modulator

We considered using PZT as the material for the modulator. A comparison of the heat treatment temperatures of each layer constituting the device revealed that the seed layer grows epitaxially at 500°C and the PZT thin film grows epitaxially at 550°C. In addition, optical measurements were performed to determine the optimum structure of each part of the waveguide, with the width being 1.2μm and the end face being 1.6μm. And we fabricated EO waveguide modulator.