[21p-C304-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

▲ [21p-C304-5] Electrically-Injected Mid-infrared GeSn Edge-Emitting Waveguide Diodes

〇(M1)Lung-Yi Hsu¹、Yi-Wei Peng¹、Chen-Wei Wu¹、Guo-En Chang¹ (1.National Chung Cheng Univ.)

キーワード：GeSn alloys, Light emitters, Silicon Photonics

We demonstrate a GeSn electrically-injected waveguide light emitter with a lateral p-i-n diode structure. Strong electroluminescence in the mid-infrared range was successfully achieved at room temperature, showing great promises for efficient electrically-injected group-IV light emitters operating at room-temperature.