[21p-C304-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

▲ [21p-C304-6] Increasing Photoluminescence from GeSn alloys using Microwave Annealing

〇(M2)Yue-Tong Jheng¹、Guo-En Chang¹ (1.National Chung Cheng Univ.)

キーワード：GeSn alloys, Microwave annealing, Photoluminescence

We present an investigation of the effect of microwave annealing on the photoluminescence of GeSn alloys. Proper microwave annealing can help relax the unwanted compressive strain initially stored in the GeSn layer, thereby enhancing the photoluminescence.