The 83rd JSAP Autumn Meeting 2022

Presentation information

Symposium (Oral)

Symposium » Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

Wed. Sep 21, 2022 1:30 PM - 5:35 PM M206 (Multimedia Research Hall)

Heiji Watanabe(Osaka Univ.), Digh Hisamoto(Hitachi)

1:30 PM - 1:50 PM

[21p-M206-1] Introduction of MEXT Program Innovative Power-Electronics Technologies (INNOPEL) and Expectation for Basic Science Research on Power Devices

Tatsuo Oomori1 (1.Mitsubishi Electric Corp.)

Keywords:power devices, power electronics, wide band gap semiconductor

MEXT Program Innovative Power-Electronics Technologies (INNOPEL) is a research and development project of the Ministry of Education, Culture, Sports, Science and Technology, which is scheduled for 5 years from 2021. We are developing power devices that can fully realize the excellent material properties of the WBG semiconductors by promoting basic science research. And we are also advancing research and development to create power electronics circuit systems and passive elements, etc. which can fully realize the potential of WBG power devices. In this lecture, I will introduce the purpose and efforts of the project and express my expectations for basic science research.