[21p-P09-1~10] 9.4 Thermoelectric conversion

[21p-P09-7] Evaluation of interface characteristics of Fe2VWAl thin film/Si substrate composite structure

〇Koki Enomoto¹, Mutsunori Uenuma¹, Toshimitsu Maeda¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:Thin-film thermoelectric conversion devices, Fe2VWAl

Thin-film thermoelectric conversion devices require a larger power factor (PF) than bulk materials to generate sufficient power, and it has been reported that Fe2VWAl thin film/Si has a PF higher than other materials.We considered that the junction interface may have an influence on the electrical characteristics of the Fe2VWAl/pSi structure, and evaluated the electrical characteristics of the junction interface based on the capacitance-voltage (C-V) characteristics.The results suggest that there is a Schottky barrier at the Fe2VWAl/pSi junction interface.