[21p-P15-1~6] 6.1 Ferroelectric thin films

[21p-P15-5] Effect of Sc Concentration and Temperature on the Ferroelectricity of Sc-alloyed GaN Thin Films

〇Masato Uehara¹, Ryoichi Mizutani², Shinnosuke Yasuoka², Takao Shimizu^3,4, Hiroshi Yamada¹, Morito Akiyama¹, Hiroshi Funakubo² (1.AIST, 2.Tokyo Tech., 3.NIMS, 4.PRESTO)

Keywords:ferroelectric, gallium nitride, thin film

Sc_xGa_1-xN films were prepared and the ferroelectricity was investigated. According to PUND measurement, the remanent polarization value of Sc_xGa_1-xN was higher than Sc_xAl_1-xN with the same Sc concentration. On the other hand, the coercive field was equivalent to Sc_xAl_1-xN with the same Sc concentration. Since the coercive field was determined by the Sc concentration regardless of the base material, it is suggested that the starting point of polarization inversion would be around Sc.