[21p-P16-1~15] 6.4 Thin films and New materials

[21p-P16-12] Observation and evaluation of transferred film obtained from Ga-based liquid metal alloys

〇Naoki Maeda¹, Meguru Nagai¹, Takahito Nagai¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

Keywords:liquid metal, Galium Oxide

Gallium oxide (Ga2O3 ) is a semiconductor with five different forms. it has a band gap of nearly 5.0 eV and is expected to be used in power electronic devices and UV optoelectronic devices due to its high breakdown voltage and UV selectivity. The epitaxial growth method is one of the most promising methods to fabricate Ga2O3 films, but there are some problems such as low growth rate of high quality Ga2O3 films. In this study, Ga oxide films were transferred onto substrates by using eutectic Ga-based alloys as reaction solvents.