[22a-A102-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[22a-A102-1] Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (4) -Lattice relaxation-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:single interface defect, amphoteric states, electron capture processes

昨年の第69回応物春季講演会での3件の報告に引き続いて本講演では，単一の両性準位におけるDonorlike準位とAcceptorlike準位への連続的な伝導帯電子捕獲素過程を直接観測し，Donorlike準位が電子を捕獲した直後の欠陥構造緩和過程を含むAcceptorlike準位への電子捕獲過程の観測を行った結果について報告する．