9:45 AM - 10:00 AM
[22a-A307-4] Investigation of room-temperature wafer bonding of isotype materials
Keywords:room temperature wafer bonding
We investigated the room temperature wafer bonding using the isotype material substrates, changing the Fast Atom Beam (FAB) irradiation conditions to reduce the bonding interface resistance. In this study, the vacuum condition and the FAB irradiation angle were fixed at 7.5×10-6 Pa and 45°, respectively. We tested the bonding experiments, changing the other conditions of the FAB irradiation, such as applied voltage and irradiation time. The electrical characteristics of the bonded samples were evaluated. As a result, all samples exhibited a non-linear Schottky-like I-V curve. However, under the conditions (1.0 kV, 6 min) where the applied voltage of FAB was the highest and the irradiation time was the longest, the I-V characteristics showed the Ohmic-like linearity with the lowest junction resistance.