10:15 AM - 10:30 AM
[22a-A307-6] Investigation of ohmic metals for III-V compound semiconductor solar cells
Keywords:resistance heating type vacuum evaporation
We demonstrated Au/Zn ohmic metals for the back-side surface of p-InP substrates.
The surfaces of p-InP samples were treated by Semico Clean or Buffered Hydrogen Fluoride (BHF) before deposition of electrode metals.
Au/Zn metals were deposited on the surfaces of p-InP samples by a resistance heating type vacuum evaporation. Then these samples were annealed at the temperature of 350-450℃. We evaluated the contact resistance using the TLM method. As a result, the lowest contact resistance of 3.3×10-5 Ωcm2 was obtained in the sample with a BHF treatment and 450℃ annealing. It was found that BHF treatment is more effective than Semico Clean in reducing the contact resistance of Au/Zn ohmic metals.
The surfaces of p-InP samples were treated by Semico Clean or Buffered Hydrogen Fluoride (BHF) before deposition of electrode metals.
Au/Zn metals were deposited on the surfaces of p-InP samples by a resistance heating type vacuum evaporation. Then these samples were annealed at the temperature of 350-450℃. We evaluated the contact resistance using the TLM method. As a result, the lowest contact resistance of 3.3×10-5 Ωcm2 was obtained in the sample with a BHF treatment and 450℃ annealing. It was found that BHF treatment is more effective than Semico Clean in reducing the contact resistance of Au/Zn ohmic metals.