[22a-A402-1~9] 3.4 Laser system and materials (formerly 3.5)

[22a-A402-8] Stoichiometry and antisite creation of a Nd:YAG thin fim grown by PLD technique

〇Kazuhiro Kawashima¹, Ken-ichiro Takahashi², Hajime Haneda³, Hideomi Koinuma³ (1.Shinkosha co. Ltd., 2.COMET Inc., 3.SCT Inc.)

Keywords:Laser material, Thin film, YAG

We are working on a thin film fabrication of a laser material with a high crystallinity by pulsed laser deposition (PLD) technique with a goal of an exploring and development of novel laser material. It has been reported that, in Y₃Al₅O₁₂ compound, antisite defects are generated in order to accommodate a shift of the stoichiometry. In this work, we grew several Nd 1 atm.% doped YAG (Nd:YAG) thin film samples where the stoichiometry is intentionally varied. The thin films were evaluated in respect of XRD structural analyses and fluorescent measurements. Resultingly the amount of antisite defects is modulated according to the change of stoichiometry of a Nd:YAG thin film, and the stoichiometric Nd:YAG film shows an analogous property to a bulk Nd:YAG.