[22a-A404-1~2] 7.4 Buried interface sciences with quantum beam

[22a-A404-1] Dimensionality reduction in the valence-band structure of a III-V semiconductor InSb ultra-thin film

〇Takahito Takeda¹, Kengo Takase¹, V. N. Strocov², Masaaki Tanaka^1,3, Masaki Kobayashi^1,3 (1.The Univ. of Tokyo, 2.Swiss Light Soruce, 3.CSRN, The Univ. of Tokyo)

Keywords:angle-resolved photoemission spectroscopy, quantum well, semiconductor

To verify the electronic dimensionality reduction in semiconductor QW, we have conducted SX-ARPES measurements on thick and ultrathin InSb films. In addition to the dissipation of the k_[001] dispersion, the SX-ARPES observations demonstrate the changes of the symmetry and periodicity of BZ in the ultrathin film as 2D QW compared with these of the 3D bulk one, indicating the electronic dimensionality reduction of the 3D bulk band dispersion caused by the quantum confinement.