The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

CS Code-sharing session » 【CS.8】 Code-sharing Session of 6.5 & 7.6

[22a-A404-3~8] CS.8 Code-sharing Session of 6.5 & 7.6

Thu. Sep 22, 2022 10:00 AM - 11:30 AM A404 (A404)

Naoka Nagamura(NIMS)

10:00 AM - 10:15 AM

[22a-A404-3] Development of field emission electron source employing highly crystalline single-walled carbon nanotube for reactive ion etching system

Norihiro Shimoi1, Ryo Terashima2, Shinji Himori2 (1.Tohoku Inst., 2.Tokyo Elec. Miyagi)

Keywords:field emission, hc-SWCNT, etching gas

Fluoride ions, which were presumably derived from SF6, were detected when field emission (FE) electron beams were irradiated in an SF6 atmosphere, and several kinds of fluoride and fluorine ions were observed to be deposited on the Si substrate surface. The fluoride ions in this experiment were not deposited before the electron beam irradiation, and the FE electron beam is expected to be a reaction field that can dissociate fluoride gas into fluoride or fluorine ions. We succeeded in finding a direction for the construction of a process system that enables etching at lower power than the conventional reactive ion etching process, and for the establishment of a basic technology for activating etching gas in a reaction field with lower energy than plasma.