[22a-A404-3~8] CS.8 Code-sharing Session of 6.5 & 7.6

△ [22a-A404-6] Atomic Bonding States of Si Oxide Layer anodized by Extremely diluted HF Solution

〇(M1)Taiki Arai¹, Yangmuyui Qiao¹, Toshiaki Suzuki¹, Akitaka Yoshigoe², Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ., 2.JAEA Materials Sciences Research Center)

Keywords:Si oxide film, anodization, Si-O

Silicon oxide layers were prepared on p-type Si substrates by anodization. An extremely diluted HF solution was used for anodization. The atomic bonding state of the layer was discussed by XPS. The Si 2p spectrum of the layer showed SiO2 and SiF peaks for low HF concentration. In this case, the atomic concentration of the Si surface is high for considering HF concentration. Therefore, it was inferred that the F atomic bonding state is abnormal.