[22a-B202-1~11] 17.3 層状物質

▼ [22a-B202-9] Ohmic conduction of single-crystalline carbon-doped h-BN

〇Supawan Ngamprapawat¹、Tomonori Nishimura¹、Kenji Watanabe²、Takashi Taniguchi²、Kosuke Nagashio¹ (1.Univ. Tokyo、2.NIMS)

キーワード：Hexagonal boron nitride, Current injection, Carbon-doped h-BN

Hexagonal boron nitride (h-BN) is a promising wide-bandgap semiconductor for deep-ultraviolet optoelectronic devices, photostable single-photon emitters, and 2D power devices. Towards the development of these high-performance devices, ohmic current injection into ultrahigh quality h-BN has been a significant challenge due to its excessively large Schottky barrier height at metal/h-BN contact. In the previous meeting, we demonstrated the first current injection into single-crystalline C-doped h-BN prepared by C diffusion. The characterizations at h-BN/metal contact suggest the creation of defect states in the gap. Nevertheless, ohmic conduction could not be obtained in this C-doped h-BN. In this meeting, we report the successful ohmic current injection into in-situ C-doped h-BN synthesized by including C as a dopant during the growth.