[22a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

△ [22a-B204-2] Fabrication of bottom-gate JFETs by ion implantation into a semi-insulating SiC substrate

〇Shunya Shibata¹, Taiga Matsuoka¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:semiconductor device, Silicon Carbide, Junction Field Effect Transistor