[22a-C101-1~11] CS.5 Code-sharing Session of 3.10 & 3.12

△ [22a-C101-1] Design and fabrication of Si₃N₄ metasurface phaser towards InGaN-based circularly polarized optical devices

〇Yuki Murata¹, Shintaro Toda^3,1, Yasuhumi Fujiwara¹, Nakagawa Takashi¹, Shuhei Ichikawa^1,2 (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.ULVAC Inc.)

Keywords:Metasurface, Circular polarization

Recently, circular polarization is expected to be applied to fields such as quantum cryptography communication and bioimaging, but a single devices has not yet been put into practical use. Therefore, we propose InGaN-based circularly polarized optical devices using a metasurface. In this study, we have evaluated silicon nitride metasurface in both simulation and experiment. These results indicate the feasibility of InGaN-based circularly polarized optical devices.