[22a-C200-1~10] 15.4 III-V-group nitride crystals

[22a-C200-10] [INVITED] Challenges on scaling up to 300 mm GaN-on-Si epiwafers and their micro LED applications

〇Atsushi Nishikawa¹, Alexander Loesing¹, Burkhard Slischka¹ (1.ALLOS Semiconductors GmbH)

Keywords:GaN, 300 mm, micro LED

Novel display types like AR/MR, light-field and transparent displays for metaverse and other new display applications require new technological approaches. We have proposed a combination of large diameter GaN-on-Si epiwafer and high-precision, low-cost Si foundry processes as the ultimate solution to overcome the current cost and yield issues in micro LED display fabrication. Based on ALLOS’ strain-engineering technologies, we have successfully demonstrated excellent emission uniformity while at the same time the epiwafers being flat for 200 mm GaN-on-Si. Furthermore, scaling up to 300 mm has been realized despite a much higher hurdle for GaN-on-Si epitaxy. As a result, a flat 300 mm epiwafer is successfully grown with a warp of 37 µm. Owing to the ALLOS’ excellent uniformity control technology together with recent reactor developments, thickness uniformity can be achieved less than 1% with the total epi thickness of 5 µm and emission uniformity of 1.9 nm STDEV with peak emission wavelength of 458.1 nm.