10:45 〜 11:00
▲ [22a-C200-7] Performance improvement of ohmic contacts on p-type Al-rich AlGaN
キーワード：AlGaN DUV-LED, p-AlGaN ohmic contact, p-AlGaN resistivity
P-type ohmic contact formation is a long-standing problem for Al-rich AlGaN, which limits the performance of optoelectronic devices such as light emitters and solar-blind photodetectors operating in deep-ultraviolet (DUV) region (<280 nm).
In this talk, we will report on an ohmic contact formation for AlxGa1-xN with Al fraction in range of 0.63-0.82 to NiAu after annealing in O2 ambient. The specific contact resistivity was determined to be in the order of 10^-2 ohmic.cm^-2 for p-AlGaN with Al fraction between 0.63-0.67. The improvement of ohmic contact is mainly attributed to the realization of high hole concentration in p-AlGaN, which could narrow the depletion region to several nanometers for improving the carrier tunneling probability.
In this talk, we will report on an ohmic contact formation for AlxGa1-xN with Al fraction in range of 0.63-0.82 to NiAu after annealing in O2 ambient. The specific contact resistivity was determined to be in the order of 10^-2 ohmic.cm^-2 for p-AlGaN with Al fraction between 0.63-0.67. The improvement of ohmic contact is mainly attributed to the realization of high hole concentration in p-AlGaN, which could narrow the depletion region to several nanometers for improving the carrier tunneling probability.