[22a-C202-1~7] 6.4 Thin films and New materials

[22a-C202-6] P-type conductivity in new Bi-Rh-O thin films fabricated by pulsed laser deposition

〇(DC)Mizuki Ohno¹, Takahiro Fujita¹, Kawasaki Masashi^1,2 (1.Dept. of Appl. Phys., The Univ. of Tokyo, 2.RIKEN CEMS)

Keywords:New compound, p-type transport, thin film

Rh³⁺ is stable and shows semiconductor like transport because 4d⁶ electrons fill the t_2g orbitals, which appear by the crystalline field of oxygen atoms. In contrast, oxides containing Rh⁴⁺ shows metallic transport properties. However, only bulk polycrystals have been reported because of difficulty of stabilizing Rh⁴⁺ state. Here we report fabrication of two kinds of Bi-Rh-O new compounds as thin film form on the YSZ(111) substrate by using pulsed laser deposition (PLD). Their longitudinal resistivity show metallic temperature dependence and Hall resistivity show p-type carriers.