[22a-C301-1~11] 3.6 Laser processing (formerly 3.7)

[22a-C301-9] Boron ion implantation on femtosecond-laser-irradiated diamond surface

〇Fumiya Iwaasa¹, Tomoyuki Ueki¹, Takuro Tomita¹, Tatsuya Okada¹ (1.Tokushima Univ.)

Keywords:femtosecond laser, diamond, ion implantation

Surface of diamond crystals was irradiated by femtosecond laser to introduce modifications. Boron ions were implanted onto the modified surface at a high temperature and a room temperature. Boron ion distribution along the depth direction was measured using SIMS, and crystallinity of diamond was evaluated with TEM. The boron ion concentration in the laser-irradiated area in the high-temperature implanted crystal was 10 times higher than that in the non-irradiated area. It was confirmed that the introduction of laser-induced surface modifications enhanced the introduction of boron ions into diamond crystals.