[22p-A205-1~18] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [22p-A205-14] Domain structure imaging of current-induced magnetization switching process
in a synthetic antiferromagnet

〇Hiroto Masuda^1,2、Yuta Yamane^3,4、Takeshi Seki^1,5、Raab Klaus⁶、Takaaki Dohi⁶、Rajkumar Modak⁵、Ken-ichi Uchida^1,5、Jun'ichi Ieda⁷、Klaui Mathias⁶、Koki Takanashi^1,7 (1.IMR, Tohoku Univ.、2.Grad. Sch. Eng., Tohoku Univ.、3.FRIS, Tohoku Univ.、4.RIEC, Tohoku Univ.、5.NIMS、6.Institute of Physics, Johannes Gutenberg Univ. Mainz、7.ASRC, JAEA)

キーワード：Antiferromagnetic material, Interlayer exchange coupling, Spin-orbit torque switching

Antiferromagnetic materials exhibit advantageous characteristics for developing ultrafast and ultrahigh density magnetic memory devices. A synthetic antiferromagnet is desirable to study the interaction between the antiferromagnetic structure and the conduction electron spin because its antiferromagnetic coupling strength is tuned by simply changing the layer thicknesses. In this study, we performed the domain structure imaging for the Pt/Co/Ir/Co/Pt system using a Kerr microscope and tried to clarify the current-induced magnetization switching process. It was found that the switching process strongly depends on the coupling strength and the magnetization orientation.