2022年第83回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[22p-A205-1~18] 10.2 スピン基盤技術・萌芽的デバイス技術

2022年9月22日(木) 13:30 〜 18:30 A205 (A205)

金井 駿(東北大)、笠原 健司(福岡大)、伊藤 啓太(東北大)

17:15 〜 17:30

[22p-A205-14] Domain structure imaging of current-induced magnetization switching process
in a synthetic antiferromagnet

Hiroto Masuda1,2、Yuta Yamane3,4、Takeshi Seki1,5、Raab Klaus6、Takaaki Dohi6、Rajkumar Modak5、Ken-ichi Uchida1,5、Jun'ichi Ieda7、Klaui Mathias6、Koki Takanashi1,7 (1.IMR, Tohoku Univ.、2.Grad. Sch. Eng., Tohoku Univ.、3.FRIS, Tohoku Univ.、4.RIEC, Tohoku Univ.、5.NIMS、6.Institute of Physics, Johannes Gutenberg Univ. Mainz、7.ASRC, JAEA)

キーワード:Antiferromagnetic material, Interlayer exchange coupling, Spin-orbit torque switching

Antiferromagnetic materials exhibit advantageous characteristics for developing ultrafast and ultrahigh density magnetic memory devices. A synthetic antiferromagnet is desirable to study the interaction between the antiferromagnetic structure and the conduction electron spin because its antiferromagnetic coupling strength is tuned by simply changing the layer thicknesses. In this study, we performed the domain structure imaging for the Pt/Co/Ir/Co/Pt system using a Kerr microscope and tried to clarify the current-induced magnetization switching process. It was found that the switching process strongly depends on the coupling strength and the magnetization orientation.