[22p-A301-1~15] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

▲ [22p-A301-11] Feasibility analysis of Cr₂Ge₂Te₆ thin film for piezoresistive pressure sensor

〇Yinli Wang¹, Yi Shuang², Mayu Nakajima¹, Daisuke Ando¹, Fumio Narita³, Yuji Sutou^1,2 (1.School of Engineering, Tohoku Univ., 2.AIMR, 3.Graduate School of Environmental Studies, Tohoku Univ.)

Keywords:piezoresistive, thin film

As the booming development of the Internet of Thing (IoT), many kinds of sensors are investigated to collect information for analysis systematically. Especially in healthcare IoT system, wearable health monitor gains significant prominence since it has great potential to reduce the burden of the overwhelmed healthcare system aggravated by COVID-19. Piezoresistive pressure sensors are widely used as strain gage, wearable health monitor, tactile sensor and electric skins because of their high stability. With high gauge factor and controllability, semiconductor piezoresistive sensors are getting more and more attention, being researched and improved. The classical phase-change material of Ge₂Sb₂Te₅ has been verified that possesses a giant gauge factor of 338. This finding raises the potential for development and application of piezoresistive pressure sensors using a phase-change chalcogenide film. In this work, piezoresistive performance of Cr₂Ge₂Te₆ thin film was evaluated comprehensively under different local structure phases, including amorphous phase and stable phase.