The 83rd JSAP Autumn Meeting 2022

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Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[22p-A301-1~15] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Thu. Sep 22, 2022 1:30 PM - 5:45 PM A301 (A301)

Toshihiro Nakaoka(Sophia Univ.), Yuji Sutou(Tohoku Univ.), Kotaro Makino(AIST)

2:30 PM - 2:45 PM

△ [22p-A301-5] Modulation of switching voltages of Ag-GeTe based CBRAM by RF input

〇(DC)Yifei Yin1, Keito Tsukamoto1, Hitoshi Hayashi1, Toshihiro Nakaoka1 (1.Sophia Univ.)

Keywords:Ag-GeTe CBRAM, non-linear current-voltage, frequency multiplication

Abnormal diffusion in which active metal ions such as Ag move into solid amorphous chalcogenides is being studied not only as an interesting electrochemical reaction but also for a wide range of applications such as sensors and memories.We have focused on the non-linear current-voltage characteristics of Ag-GeTe CBRAM and evaluated the frequency multiplication characteristics.This time, we created an Ag-GeTe CBRAM capable of inputting RF waves, and found a reversible change in SET / RESET voltage by RF waves.