[22p-B201-1~10] 10.1 新物質・新機能創成（作製・評価技術）

▲ [22p-B201-3] Anomalous Hall and Nernst effects in antiperovskite Mn₄N films

〇Shinji Isogami¹、Keisuke Masuda¹、Yoshio Miura¹、Nagalingam Rajamanickam¹、Yuya Sakuraba¹ (1.NIMS)

キーワード：nitride thin films, anomalous Nernst effect, anomalous Hall effect

Extensive study on the magnetic thin films has been performed aiming high anomalous Nernst effect (ANE). ANE in ferromagnets and antiferromagnets has been widely investigated, whereas Mn₄N thin films are examined in this study to open a pathway for ANE of ferrimagnets. Note that it is known that the Mn₄N shows small saturation magnetization and strong perpendicular magnetic anisotropy. As a result of measurement, the relatively high ANE voltage was observed, and further improvement of ANE was suggested by the analysis based on the anomalous Hall effect.