[22p-B201-1~10] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

▲ [22p-B201-4] Growth and characterization of magneto-transport properties of Mn_4-xAu_xN epitaxial films grown by molecular beam epitaxy

〇Takumi Horiuchi¹, Taro Komori¹, Taku Hirose¹, Tomohiro Yasuda¹, Kenta Amemiya², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.KEK)

Keywords:Spintronics

Antiperovskite ferrimagnetic Mn₄N film is a notable candidate for the domain wall (DW) motion devices due to its perpendicular magnetic anisotropy and small spontaneous magnetization (M_S ~ 80 kA/m). Our previous research on Mn₄N showed a high DW velocity (v_DW ~ 900 m/s) with a current density j = 1.3×10¹² A/m² only by spin transfer torque at RT. In addition, we revealed the presence of magnetic compensation (MC) composition in Mn_4−xNi_xN and achieved v_DW ~ 3,000 m/s at j = 1.2× 10¹² A/m² around the MC composition. Thus, we consider that compensation is advantageous to fast DW motion in Mn_4−xNi_xN with a low current density.
Now, we focused on Mn_4-xAu_xN epitaxial films. There is a previous report of Mn_3.5Au_0.5N film prepared on MgO(001) substrates and the sign reversal of anomalous Hall effect (AHE) was confirmed at 155 K. This result suggests the possibility of MC. In this work, we grew Mn_4-xAu_xN films and characterized their magneto-transport properties.