[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-B204-18] 1651V, 3.6×10⁵ On/off ratio CVD diamond SBD doped with all ion implantation

〇(M1)Yuya Irie¹, Niloy Chandra Saha¹, Yuhei Seki², Jun Nakayama¹, Kim Seongwoo³, Koji Koyama³, Toshiyuki Oishi¹, Makoto Kasu¹, Yasushi Hoshino², Joji Nakata² (1.Saga Univ., 2.Kanagawa Univ., 3.Adamant Namiki.)

Keywords:ion implantation, heteroepitaxial diamond, Schottky barrier diode

Ion implantation is widely used in semiconductors as a doping technique because it allows selective doping, and SBD have been fabricated by Seki et al. to obtain high activation rates even in diamond. In this presentation, we report on the fabrication of SBD with excellent off-state breakdown voltage and rectification ratio using heteroepitaxial diamond.