[22p-P07-1~15] 6.3 Oxide electronics

[22p-P07-13] Synchrotron-radiation ARPES study on electronic states of SrVO₃/LaAlO₃/SrVO₃ double quantum well structures

〇(M2)Asato Wada¹, Tatsuhiko Kanda¹, Daisuke Shiga¹, Xianglin Cheng¹, Taehyun Kim¹, Miho Kitamura², Kohei Yoshimatsu¹, Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS KEK)

Keywords:quantum well, heterostructure, Synchrotron-radiation ARPES

We fabricate double quantum well (QW) structures consisted with a marginal Mott-insulating layer (2-ML SrVO₃)/barrier layer (n-ML LaAlO₃)/metallic QW layer (6-ML SrVO₃) and perform synchrotron-radiation angle-resolved photoemission spectroscopy (ARPES). ARPES experiments reveal that the top QW shows quantization states originated from V 3d, and the double QW structure with thick barrier layer also shows metallic states. These results indicate that the electron holes are doped in the top SrVO₃ layer to compensate the polarity discontinuity at the SrVO₃/LaAlO₃ interface, and these hole-doping result in metallic states at the top QW.