[22p-P07-1~15] 6.3 Oxide electronics

[22p-P07-5] Resistance variation mechanism and neuromorphic function enhancement of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

〇(M2)Tomoasa Takada¹, Yu Yamaguchi¹, Mitsuki Taniguchi¹, Kisara Tomiyoshi¹, Kaito Yako¹, Riku Kaneko¹, Daisuke Shiga², Hiroshi Kumigashira², Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

Keywords:oxygen vacancies, neuromorphic function, thin films

The neuromorphic memory based TiO2 thin films have been actively researched as a next-generation memory. However, the resistance variation mechanism is not clear, and the width is also small. Therefore, the purpose of this study is to elucidate the resistance variation mechanism and enhance the neuromorphic function. In this report, we will present the mechanism of the resistance variation through the electrical characteristics and electronic structure, then discuss the enhancement of neuromorphic function caused by oxygen vacancies.