[22p-P08-1~16] 13.9 Compound solar cells

[22p-P08-10] Observation of photoluminescence in Cu₂Sn_1-xSi_xS₃ bulk crystals

〇Kazuhiro Iwasaki¹, Ayaka Kanai¹, Kunihiko Tanaka¹ (1.Nagaoka Univ. Tech.)

Keywords:Cu2Sn1-xSixS3, CTSiS, photoluminescence

To evaluate the fundamental properties of Cu₂Sn_1-xSi_xS₃ (CTSiS), the photoluminescence of CTSiS bulk crystals was investigated. In terms of excitation intensity dependence, the luminescence at 1.20 eV increased with lower linear with respect to the excitation intensity, whereas the luminescence at 1.35 eV increased with super linear. In addition, the 1.35 eV luminescence almost disappeared at temperatures above 60 K. From these results, we inferred that the origin of the 1.35 eV peak is the exciton luminescence.