[23a-A202-1~10] 6.2 Carbon-based thin films

[23a-A202-3] Electron emission from negative electron affinity surfaces of planar-type diamond PIN diodes

〇(M2)Shoya Yamakawa^1,2, Hiromitsu Kato², Masahiko Ogura², Yukako Kato², Toshiharu Makino², Ryota Tsukamoto^1,2, Daisuke Takeuchi^2,1, Ichiro Shoji¹ (1.Chuo Univ., 2.AIST)

Keywords:diamond, diode, electron emission

The diamond vertical PIN diodes were fabricated on a p-type substrate and the mesa structured diodes were fabricated by ICP etching, since there is no n-type substrate. Then in this study, we attempted to fabricate planer-type diodes on Ib(111) substrates using selective growth technique, which could avoid damage in the device caused by ICP etching. As a result, the planer-type PIN diodes fabricated successfully showed electron emission by turning on, and the highest electron emission efficiency was close to 1%, which was comparable to the vertical-type one.It means that the planer-type diodes have a potential of high electron emission efficiency as well as the verticaltype ones, even the body was fabricated only by thin-films.