[23a-A202-1~10] 6.2 Carbon-based thin films

△ [23a-A202-5] Normally-off operation in Vertical Diamond MOSFET using C-Si-O sidewall channel

〇(B)Kento Narita¹, Kosuke Ota¹, Yu Fu¹, Chiyuki Wakabayashi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Inst.)

Keywords:Diamond, MOSFET, Vertical-type

In this study, we fabricated vertical diamond MOSFET using Oxidized Si terminated diamond(C-Si-O), threshold voltage (V_th): -10.2 V and maximum drain current density (I_D): 8.05 mA/mm were obtained and achieved the first normally-off operation in a vertical diamond FET. Normally-off operating device at high current densities of V_th: -1.9 V, I_D: 102 mA/mm were also obtained.