[23a-A205-1~13] 10.2 Fundamental and exploratory device technologies for spin

▼ [23a-A205-4] Passage control of the skyrmion by a gate electrode

〇(M2)Ken Hashimoto¹, Ryo Ishikawa³, Minori Goto^1,2, Hikaru Nomura^1,2, Yoshishige Suzuki^1,2 (1.Osaka Univ., 2.CSRN-Osaka., 3.ULVAC inc.)

Keywords:skyrmion, voltage control, device

Magnetic skyrmions have some unique features, and they are recently attracting attention as information carriers in unconventional computers. In order to realize such computers, electrical gating and amplification of the skyrmion signal are indispensable. The main mechanism of the voltage control technique for skyrmions is VCMA effect. In the previous studies using the VCMA effect, modulation of the diffusion coefficient and creation/annihilation of the skyrmions have been demonstrated. However, “skyrmion gates/transistors” have not been realized experimentally. Obstacles might be that non-negligible energy barrier appears at the edge of the gate electrode and traps the skyrmions there. In this talk, our attempts to realize a device in which skyrmions are not trapped at the edge of the gate electrode will be presented.
A skyrmion film consisting of Ta(5.9)|Co₁₆Fe₆₄B₂₀(1.2)|Ta(0.2)|MgO(2.2)|SiO₂(50.0) (described by nm) were deposited on a thermally oxidized silicon substrate by the magnetron sputtering. As a result, we found that differences in electrode structure is one of the factors determining the passage of skyrmions.