2022年第83回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[23a-A205-1~13] 10.2 スピン基盤技術・萌芽的デバイス技術

2022年9月23日(金) 09:00 〜 12:30 A205 (A205)

安藤 裕一郎(京大)、重松 英(京大)

09:45 〜 10:00

[23a-A205-4] Passage control of the skyrmion by a gate electrode

〇(M2)Ken Hashimoto1、Ryo Ishikawa3、Minori Goto1,2、Hikaru Nomura1,2、Yoshishige Suzuki1,2 (1.Osaka Univ.、2.CSRN-Osaka.、3.ULVAC inc.)

キーワード:skyrmion, voltage control, device

Magnetic skyrmions have some unique features, and they are recently attracting attention as information carriers in unconventional computers. In order to realize such computers, electrical gating and amplification of the skyrmion signal are indispensable. The main mechanism of the voltage control technique for skyrmions is VCMA effect. In the previous studies using the VCMA effect, modulation of the diffusion coefficient and creation/annihilation of the skyrmions have been demonstrated. However, “skyrmion gates/transistors” have not been realized experimentally. Obstacles might be that non-negligible energy barrier appears at the edge of the gate electrode and traps the skyrmions there. In this talk, our attempts to realize a device in which skyrmions are not trapped at the edge of the gate electrode will be presented.
A skyrmion film consisting of Ta(5.9)|Co16Fe64B20(1.2)|Ta(0.2)|MgO(2.2)|SiO2(50.0) (described by nm) were deposited on a thermally oxidized silicon substrate by the magnetron sputtering. As a result, we found that differences in electrode structure is one of the factors determining the passage of skyrmions.