Circularly polarized electroluminescence properties of quantum dot spin-polarized light-emitting diodes using GaNAs spin filter

Kohei Eto; Satoshi Hiura; Soyoung Park; Junichi Takayama; Agus Subagyo; Kazuhisa Sueoka; Akihiro Murayama

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

[23a-B201-1~12] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

Fri. Sep 23, 2022 9:00 AM - 12:15 PM B201 (B201)

Hiroshi Naganuma(Tohoku Univ.), Mitsuharu Uemoto(Kobe Univ.)

10:00 AM - 10:15 AM

▼ [23a-B201-5] Circularly polarized electroluminescence properties of quantum dot spin-polarized light-emitting diodes using GaNAs spin filter

〇(D)Kohei Eto¹, Satoshi Hiura¹, Soyoung Park¹, Junichi Takayama¹, Agus Subagyo¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Keywords:quantum dot, light emitting diode, GaNAs

We investigate the circularly polarized EL properties of a semiconductor quantum dot spin-polarized light-emitting diode using GaNAs spin filter. In this study, we found that both strong EL emission and high circular polarization degree of EL are achieved at room temperature by using a tunnel-coupled structure of InGaAs quantum dots and GaNAs quantum well.