[23a-B201-1~12] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

▼ [23a-B201-5] Circularly polarized electroluminescence properties of quantum dot spin-polarized light-emitting diodes using GaNAs spin filter

〇(D)Kohei Eto¹、Satoshi Hiura¹、Soyoung Park¹、Junichi Takayama¹、Agus Subagyo¹、Kazuhisa Sueoka¹、Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

キーワード：quantum dot, light emitting diode, GaNAs

We investigate the circularly polarized EL properties of a semiconductor quantum dot spin-polarized light-emitting diode using GaNAs spin filter. In this study, we found that both strong EL emission and high circular polarization degree of EL are achieved at room temperature by using a tunnel-coupled structure of InGaAs quantum dots and GaNAs quantum well.