10:45 〜 11:00
▲ [23a-B202-8] Clean environment effect on nucleation of twisted graphene islands grown by serial thermal process without air exposure using graphene/SiC template
キーワード：graphene, twisted few layer graphene, crystal growth
Twisted few layer graphene (tFLG) has recently attracted great attention due to the emergence of peculiar electrical properties. In previous study, the synthesis of tFLG by graphene layer-by-layer growth on monolayer graphene templates (MLGT) using a chemical vapor deposition (CVD) method. We verified that moiré pattern appears in the lattice structure of the grown graphene 2-dimensional (2D) island and the grown 2D graphene islands have the randomly twisted angles. By investigating the temperature dependence of graphene island dimensions, the emergence of graphene islands with different twist angles indicates that localized close nucleation sites lead to coalescence processes during the lateral growth stage. In this study, based on understanding the growth mechanism of tFLG, we further optimized the surface cleanliness of MLGT. By reducing the nucleation sites on the MLGT, large-area lateral growth of twisted graphene can be realized.