[23a-B203-1~11] 17.1 Carbon nanotubes & other nanocarbon materials

[23a-B203-3] Brønsted acid doping of single-walled carbon nanotubes with neutral boron compounds

〇(M2)Aoi Hamasuna¹, Naoki Tanaka^1,2, Tsuyohiko Fujigaya^1,2,3 (1.Grad. Sch. of Eng., Kyushu Univ., 2.WPI-I2CNER, 3.Ctr. for Molecular System, Kyushu Univ.)

Keywords:carbon nanotube, boron, carrier doping

Boron compounds exhibit electron deficiency due to the vacant 2p orbital of the boron atom. Therefore, boron compounds act as a p-type dopant for organic semiconductors. Recently, Brønsted acid doping (BA doping) of neutral boron, tris(pentafluorophenyl)borane (BCF), with a water-coordinated BCF-H₂O complex was reported as a new dopant for boron compounds. BA doping shows higher carrier doping performance and air-stability than Lewis acid doping. On the other hand, there are only few studies of hole doping with boron compounds in single-walled carbon nanotubes (SWCNTs), which are composed of all carbon atoms, and BA doping has not been investigated. In this study, we investigated BA doping with BCF for SWCNTs.