[23a-C202-1~5] 4.6 Terahertz Photonics

▼ [23a-C202-4] Interfacial electric field and bandgap estimation on GaN:Eu using laser terahertz emission microscopy

〇Fumikazu Murakami¹, Atsushi Takeo², Abdul Mannan¹, Yasufumi Fujiwara², Masayoshi Tonouchi¹ (1.ILE, Osaka Univ., 2.GSE, Osaka Univ.)

Keywords:gallium nitride, GaN:Eu, THz emission microscopy

Europium doped GaN (GaN:Eu) is one of the novel candidates for red light-emitting diodes. To understand further characterization of the material, we measured the THz emission from GaN:Eu/unintentionally (UID)-GaN layered structure. The emission amplitudes showed that the growth of GaN:Eu film on UID-GaN enhances the band bending of the energy band near the GaN:Eu/UID-GaN interface. Furthermore, THz emissions properties excited by various excitation wavelength indicates that the Eu doping reduce the bandgap energy of host GaN.