[23a-C206-1~8] 3.5 Ultrashort-pulse and high-intensity lasers (formerly 3.6)

[23a-C206-7] Optical change in the MnTe semiconductor film via femtosecond pulse laser irradiation

〇Shunsuke Mori¹, Horoshi Tanimura², Tetsu Ichitsubo², Yuji Sutou^1,3 (1.Tohoku Univ. (Eng.), 2.Tohoku Univ. (IMR), 3.AIMR)

Keywords:MnTe polymorph, femtosecond pulse laser, optical property

MnTe semiconductor films show the polymorphic transformation from metastable wurtzite-type to stable NiAs-type structure with drastic change in optical properties. It occurred via atomic-displacement along specific direction, which enables to perfrom the low-energy and fast optical switching. In this study, we study the optical change and photo-induced transformation in the MnTe films via femtosecond pulse laser irradiation towards optical memory showing ultrafast switching.